WHAT IS HJT TECHNOLOGY?

Intrinsic thin-film heterojunction (HJT) cells feature a symmetrical structure with an N-type crystalline silicon wafer at the center. The rear side has intrinsic and p-type amorphous silicon layers forming a P–N junction, while the front side has intrinsic and n-type amorphous silicon layers forming a back surface field.

Transparent conductive oxide (TCO) layers are deposited on both sides, followed by double-sided electrodes via screen printing and copper electroplating. These HJT cells deliver high power output and reliability, representing the next-generation mainstream PV cell platform technology.
* HJT cells feature a naturally symmetrical structure.
TCO
n type μc-Si
i-a-Si
n type c-Si
i-a-Si
p type μc-Si
TCO

WHY CHOOSE HJT?

Type P
PERC
21~23%
N-type (Mono-Si)
TOPCon
24.5~26.0%

10+ manufacturing steps

800℃+ processing temperature

High carbon footprint

HJT
25.5~27%

Only 4 manufacturing steps

200℃ processing temperature

Lower carbon footprint

BC
25.5~27.5%

More complex manufacturing steps

800℃+ processing temp.

High carbon footprint

Low yield rate

Mainstream PV Cell Technologies
HJT + Perovskite Tandem
28~43%

HJT: the optimal platform for perovskite tandem integration

Ultra-high efficiency

Low-temp. processing

Future

HIGHER EFFICIECNY

24.47%
Module Champion Efficiency
Silver-grid
HJT Module
Copper-grid
HJT Module
Cell Efficiency Gain
Module Power Increase
Efficiency, Defined by Heterojunction
HJT technology combines crystalline silicon with ultra-thin amorphous silicon layers on both sides of the wafer. The intrinsic and doped a-Si layers form the critical heterojunction interface, effectively passivating the silicon surface, minimizing energy losses, and unlocking higher conversion efficiency. Dinto Solar has achieved a champion HJT cell efficiency of 26.9% and a module efficiency of 24.47%.
Higher Efficiency Enabled by Copper Metallization
Copper-based metallization in HJT cells replaces silver-coated copper designs with ultra-narrow gridlines and significantly lower resistivity, reducing shading losses and improving current collection, thereby enhancing both conversion efficiency and module power output. Compared with typical silver-coated copper cells, copper-metallized HJT (C-HJT) delivers an efficiency gain of 0.5% at the cell level and a module power increase of 10 W.

MORE POWER GENERATION

-0.24%/°C
Industry Leading Temperature Coefficient
Hot Climate
SUNRISE
NOON
SUNSET
Average daily power generation
increased by over 3%
+2~5%
Higher Bifacial Energy Yield Gain
TOPCon
80%
DintoSolar HJT
90%
Direct Sunlight
Diffuse Sunlight On Back Of Panel
Sunlight Reflected Off Ground To Back Of Panel
≤9.7%
Lower Module Degradation
≤1%
degradation in the first year
≥90.3%
of power maintained after 30 yrs
99%
91.8%
90.3%
Excellent Temperature Coefficient
HJT modules feature an industry-leading temperature coefficient of -0.24%/℃, significantly outperforming other modules. Under high temperature and high irradiance, HJT modules maintain higher output, providing more stable performance and greater annual energy yield.
Higher Bifacial Energy Yield Gain
Dinto Solar’s HJT modules achieve a stable bifaciality of 90% ±5%. Both sides of the n-type silicon wafer are coated with identical intrinsic and doped a-Si layers and TCO films, enabling rear-side efficiency nearly equal to the front. Compared with TOPCon modules, HJT modules achieve approximately 2–5% higher bifacial energy yield.
Lower Module Degradation
Thanks to n-type wafers and low-temperature fabrication, HJT modules effectively eliminate LID and PID. First-year degradation is below 1%, and over 30 years total degradation is ≤9.7%, ensuring stable long-term power output and reliable investment returns.
Superior Low-Light Performance
HJT modules deliver excellent short-wavelength response and high open-circuit voltage (~750 mV, 20–30 mV higher than other technologies). Interface passivation and symmetric structure enable all-direction light capture, extending daily generation and boosting lifetime energy yield.
Copper Gridlines: Reduced Shading Area
Copper gridlines with a linewidth of 15 μm reduce shading
area by 30%, improving HJT cell efficiency and module power output.
Silver Gridlines
Copper Gridlines
30%
Shading area reduced
Copper Gridlines: Enhanced Conductivity
Contact resistance reduced by 37.5% and resistivity by 62.3%. The combination of ultra-narrow
gridlines and low resistivity enhances current collection, improving HJT cell efficiency and module power output.
37.5%
Contact resistance decreased
62.3%
Resistivity decreased
Contact resistivity
Gridline resistivity
Superior Low-Light Performance
HJT modules deliver excellent short-wavelength response and high open-circuit voltage (~750 mV, 20–30 mV higher than other technologies). Interface passivation and symmetric structure enable all-direction light capture, extending daily generation and boosting lifetime energy yield.
Copper Gridlines: Reduced Shading Area
Copper gridlines with a linewidth of 15 μm reduce shading
area by 30%, improving HJT cell efficiency and module power output.
Copper Gridlines: Enhanced Conductivity
Contact resistance reduced by 37.5% and resistivity by 62.3%. The combination of ultra-narrow
gridlines and low resistivity enhances current collection, improving HJT cell efficiency and module power output.

HIGHER RELIABILITY

Butyl Sealant (PIB) + Dual-glass
Innovative butyl sealant and double-sided coated glass enhance module sealing, ensuring exceptional moisture resistance.
<4%
DH3000 Degradation
DH1000
2.1%
DH2000
2.8%
DH3000
3.9%
Film
Glass
Frame
Cell
Glass
Film
PIB
Light Conversion Film
The HJT module is encapsulated with light conversion film
that converts UV light (<380 nm) to blue light (~400-550 nm).
This feature significantly enhances the module's UV resistance.
UV180 <3%
Sample 1
Sample 2
Sample 3
Sample 4
IR
UV
Light Conversion Film
Solar Cells
Copper Gridlines: Ultra-High Soldering Pull Strength
Dynamic Pull Force Curve
Copper Grille C-HJT
Traditional HJT
1.8N
Avg. Upper Limit
Avg. Lower Limit
1.0N
1.0N
Avg. Upper Limit
1.0N
Avg. Lower Limit
Copper Gridlines: Superior Microcrack Resistance
Stronger Module Resistance to Microcracks
Continued Power Generation After Cell Cracking
Enhanced Hot-Spot Resistance at Module Level
Butyl Sealant (PIB) + Dual-glass
Innovative butyl sealant and double-sided coated glass enhance module sealing, ensuring exceptional moisture resistance.
Light Conversion Film
The HJT module is encapsulated with light conversion film
that converts UV light (<380 nm) to blue light (~400-550 nm).
This feature significantly enhances the module's UV resistance.
Copper Gridlines: Ultra-High Soldering Pull Strength
Copper Gridlines: Superior Microcrack Resistance

LOWER CARBON FOOTPRINT

Thinner Silicon Wafer
90-110μm
HJT / C-HJT
Streamlined Manufacturing Process
HJT technology requires only four core process steps, significantly fewer than the more than ten steps required for TOPCon and BC technologies. This results in higher yield, lower energy consumption, and improved process controllability.
HJT / C-HJT
4 Steps
TOPCon / BC
10+ Steps
Texturing & Cleaning
PECVD
PVD
Metallization Patterning
Low-Temperature Processing
All key production steps are completed at temperatures below 200°C, enabling the use of thinner silicon wafers while minimizing thermal damage and high-temperature diffusion, thereby substantially reducing silicon material consumption, overall energy costs, and the carbon footprint.
200°C
HJT
800°C
Other Solar Cells
Silver-free Solar Cell Manufacturing
Silver
155 kg CO₂/kg
Copper
3.97 kg CO₂/kg
  • Silver-free C-HJT mass production cuts the carbon footprint of copper to just 2.56% of silver, significantly lowering overall emissions.
  • Copper delivers electrical conductivity and mechanical strength comparable to silver, yet is 1,600 times more abundant and costs only one-tenth as much — making it an ideal, sustainable choice for the solar industry.
Thinner Silicon Wafer
HJT cells utilize thinner silicon wafers, minimizing thermal damage and eliminating the need for high-temperature diffusion. This significantly reduces silicon consumption and overall energy usage, resulting in lower costs and a markedly reduced carbon footprint.
Streamlined Manufacturing Process
HJT technology requires only four core process steps, significantly fewer than the more than ten steps required for TOPCon and BC technologies. This results in higher yield, lower energy consumption, and improved process controllability.
Low-Temperature Processing
All key production steps are completed at temperatures below 200°C, enabling the use of thinner silicon wafers while minimizing thermal damage and high-temperature diffusion, thereby substantially reducing silicon material consumption, overall energy costs, and the carbon footprint.
Silver-free Solar Cell Manufacturing
Silver-free C-HJT mass production cuts the carbon footprint of copper to just 2.56% of silver, significantly lowering overall emissions.
Copper delivers electrical conductivity and mechanical strength comparable to silver, yet is 1,600 times more abundant and costs only one-tenth as much — making it an ideal, sustainable choice for the solar industry.

Dinto Solar HJT Solar Technology Roadmap

HJT Cell Tech
  • Low-temperature gettering
  • Multi-layer interfacial passivation films
  • Double-sided microcrystalline silicon
  • High-efficiency TCO thin films
  • Rear-side polishing
  • Edge passivation optimization
  • 110 μm ultra-thin wafer mass production
  • Ultra-narrow gridline printing
  • High-precision copper gridlines
  • HJT–perovskite tandem
HJT Module Tech
  • Half-cut cells
  • 1/3-cut cells
  • Super Multi-Busbar (SMBB)
  • Zero Busbar (0BB)
  • Flexible interconnection
  • Full-screen module design
  • High-reflectivity triangular solder ribbons
  • High-transmittance coated glass
  • High-reliability encapsulation
  • Lightweight & flexible encapsulation
C-HJT 1.0
1/3-cut + C-HJT 2.0
HJT–perovskite Tandem
≥ 23.18%
Module Efficiency
720W+
Module Power
2024
≥ 23.99%
Module Efficiency
745W+
Module Power
2025
≥ 24.47%
Module Efficiency
760W+
Module Power
2026
≥ 25.11%
Module Efficiency
780W+
Module Power
2027
≥ 25.75%
Module Efficiency
800W+
Module Power
2028
≥ 27.36%
Module Efficiency
850W+
Module Power
2029
≥ 32.20%
Module Efficiency
1000W+
Module Power
2030
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