WHAT IS HJT TECHNOLOGY?
Intrinsic thin-film heterojunction (HJT) cells feature a symmetrical structure with an N-type crystalline silicon wafer at the center. The rear side has intrinsic and p-type amorphous silicon layers forming a P–N junction, while the front side has intrinsic and n-type amorphous silicon layers forming a back surface field.
Transparent conductive oxide (TCO) layers are deposited on both sides, followed by double-sided electrodes via screen printing and copper electroplating. These HJT cells deliver high power output and reliability, representing the next-generation mainstream PV cell platform technology.
Transparent conductive oxide (TCO) layers are deposited on both sides, followed by double-sided electrodes via screen printing and copper electroplating. These HJT cells deliver high power output and reliability, representing the next-generation mainstream PV cell platform technology.
* HJT cells feature a naturally symmetrical structure.
TCO
n type μc-Si
i-a-Si
n type c-Si
i-a-Si
p type μc-Si
TCO
WHY CHOOSE HJT?
Type P
PERC
21~23%
N-type (Mono-Si)
TOPCon
24.5~26.0%
10+ manufacturing steps
800℃+ processing temperature
High carbon footprint
HJT
25.5~27%
Only 4 manufacturing steps
200℃ processing temperature
Lower carbon footprint
BC
25.5~27.5%
More complex manufacturing steps
800℃+ processing temp.
High carbon footprint
Low yield rate
Mainstream PV Cell Technologies
HJT + Perovskite Tandem
28~43%
HJT: the optimal platform for perovskite tandem integration
Ultra-high efficiency
Low-temp. processing
Future
HIGHER EFFICIECNY
MORE POWER GENERATION
HIGHER RELIABILITY
LOWER CARBON FOOTPRINT
Dinto Solar HJT Solar Technology Roadmap
HJT Cell Tech
- Low-temperature gettering
- Multi-layer interfacial passivation films
- Double-sided microcrystalline silicon
- High-efficiency TCO thin films
- Rear-side polishing
- Edge passivation optimization
- 110 μm ultra-thin wafer mass production
- Ultra-narrow gridline printing
- High-precision copper gridlines
- HJT–perovskite tandem
HJT Module Tech
- Half-cut cells
- 1/3-cut cells
- Super Multi-Busbar (SMBB)
- Zero Busbar (0BB)
- Flexible interconnection
- Full-screen module design
- High-reflectivity triangular solder ribbons
- High-transmittance coated glass
- High-reliability encapsulation
- Lightweight & flexible encapsulation
C-HJT 1.0
1/3-cut + C-HJT 2.0
HJT–perovskite Tandem
≥ 23.18%
Module Efficiency
720W+
Module Power
2024
≥ 23.99%
Module Efficiency
745W+
Module Power
2025
≥ 24.47%
Module Efficiency
760W+
Module Power
2026
≥ 25.11%
Module Efficiency
780W+
Module Power
2027
≥ 25.75%
Module Efficiency
800W+
Module Power
2028
≥ 27.36%
Module Efficiency
850W+
Module Power
2029
≥ 32.20%
Module Efficiency
1000W+
Module Power
2030